Showing 3 results for Tauc
M. Ghamari, M. Ghasemifard,
Volume 17, Issue 2 (6-2020)
Abstract
In this research, the dependence of the optical band gap of nano gamma alumina on the OH/Al ratio and concentration of aluminum sulfate is measured through diffuse reflectance spectroscopy (DRS) in the range of 900-1100nm. The samples were prepared via sol-gel method. The results showed that the band gap is pH and concentration-dependent but in a different way. The direct band gap of alumina was determined to be 3.40, 4.37, 3.90, and 3.65 eV for samples prepared at pH 6, 7, 8, and 9, respectively. A decreasing trend was observed with increasing pH (except for pH6). The lowering of the band gap may be associated with the variations in particles size during synthesis due to the quantum size effect. The values of the band gap increased significantly through increasing concentration from 3.90 to 5.65 eV for 0.1M to 0.3M. The role of concentration in band gap control is remarkably more than pH.
Namrata Saxena, Varshali Sharma, Ritu Sharma, Kamlesh Kumar Sharma, Kapil Kumar Jain,
Volume 18, Issue 2 (6-2021)
Abstract
The work reported in this paper was focused on the investigation of surface morphological, microstructural, and optical features of polycrystalline BaTiO3 thin film deposited on p-type Si < 100 > substrate using e-beam PVD (physical vapor deposition) technique. The influence of annealing over the surface morphology of the thin film was analyzed by X-ray diffraction, atomic force microscopy and scanning electron microscopy characterization methods. When the annealing temperature was increased from as-deposited to 800 °C there was a significant growth in the grain size from 28.407 nm to 37.89 nm. This granular growth of BaTiO3 made the thin film appropriate for nanoelectronic device applications. The roughness of the annealed film got increased from 31.5 nm to 52.8 nm with the annealing temperature. The optical bandgap was computed using Kubelka-Munk (KM) method which got reduced from 3.93 eV to 3.87 eV for the as-deposited to the 800 °C annealed film. The above reported properties made the annealed film suitable for optoelectronic applications. For polycrystalline BaTiO3 thin film the refractive index varied from 2.2 to 1.98 from 400 to 500 nm and it was 2.05 at 550 nm wavelength. The broad peaks in Raman spectra indicated the polycrystalline nature of the thin film. It had been also observed that with the annealing temperature the intensity of the Raman bands got increased. From these results, it was proved that annealing significantly improved the crystallinity, microstructural, surface morphological and optical features of the barium titanate thin film which made it suitable as sensors in biomedical applications as it is cost-effective, lead-free and environment friendly material.
Tushar Wagh, Sagar Mane, Gotan Jain, Madhavrao Deore,
Volume 21, Issue 3 (9-2024)
Abstract
Nowadays metal oxide nanoparticles and transition metal dichalcogenides play a vital role in various areas like optical sensors, solar cells, energy storage devices, gas sensors and biomedical applications. In the current research work, we synthesized ZrSe2 nanoparticles by hydrothermal method. The ZrSe2 nanoparticles were synthesis using precursors such as ZrOCl2.8H2O and Na2SeO3.5H2O in the addition of surfactant cetyl trimethyl ammonia bromide CTAB and reductant hydrazine hydrate, respectively. By using synthesized ZrSe2 nanopowder thick films were developed on a glass substrate
using the screen printing method. The structural properties of ZrSe2 powder were studied by X-ray diffraction (XRD). The X-ray diffraction analysis revealed that the hexagonal crystal structure and crystalline size were found to be 55.75 nm. The thick films of ZrSe2 were characterized by field emission scanning electron microscopy (FESEM) and energy dispersive X-ray analysis (EDAX). The surface morphological analysis of ZrSe2 nanostructured thick film shows hierarchical nanoparticles. The energy band gap of synthesized powder was calculated using a Tauc plot from UV-visible spectroscopy. The gas-sensing properties of ZrSe2 thick films were studied. The developed ZrSe2 thick films show maximum sensitivity and selectivity towards the ammonia NH3 gas at an operating temperature of 120 °C and the gas concentration was 500 ppm. The developed thick films show fast response and recovery time.Nowadays metal oxide nanoparticles and transition metal dichalcogenides play a vital role in various areas like optical sensors, solar cells, energy storage devices, gas sensors and biomedical applications. In the current research work, we synthesized ZrSe2 nanoparticles by hydrothermal method. The ZrSe2 nanoparticles were synthesis using precursors such as ZrOCl2.8H2O and Na2SeO3.5H2O in the addition of surfactant cetyl trimethyl ammonia bromide CTAB and reductant hydrazine hydrate, respectively. By using synthesized ZrSe2 nanopowder thick films were developed on a glass substrate
using the screen printing method. The structural properties of ZrSe2 powder were studied by X-ray diffraction (XRD). The X-ray diffraction analysis revealed that the hexagonal crystal structure and crystalline size were found to be 55.75 nm. The thick films of ZrSe2 were characterized by field emission scanning electron microscopy (FESEM) and energy dispersive X-ray analysis (EDAX). The surface morphological analysis of ZrSe2 nanostructured thick film shows hierarchical nanoparticles. The energy band gap of synthesized powder was calculated using a Tauc plot from UV-visible spectroscopy. The gas-sensing properties of ZrSe2 thick films were studied. The developed ZrSe2 thick films show maximum sensitivity and selectivity towards the ammonia NH3 gas at an operating temperature of 120 °C and the gas concentration was 500 ppm. The developed thick films show fast response and recovery time.